ECE Colloquium
Friday Dec. 8, 2023
12 pm - 1 pm
ITE 336
Tunneling devices everywhere:
From quantum dot photodetectors to nitride-based hot electron transistors
Prof. Alex Zaslavsky
Brown University
This seminar will describe two disparate types of tunneling-based devices: quantum dot photodetectors and nitride-based hot electron transistors. First, we will discuss broadband (visible to near-infrared) Ge quantum-dot-based photodetectors produced in a low-temperature silicon-technology compatible fabrication flow. They feature high internal gain and responsivity, exceptional quantum efficiency and relatively high speed. Second, we will discuss AlGaN/GaN hot electron transistors (HETs): vertical current flow devices with reasonably high gain, exception current handling (exceeding 1 MA/cm2) and potentially very high operation frequency. These HETs also offer a platform for the long-proposed but never demonstrated coherent transistor concept, promising gain at THz frequencies.
Alex Zaslavsky received his Ph.D. in electrical engineering from Princeton in 1991 and was a postdoctoral scientist at IBM Research Yorktown until 1993. In 1994 he joined Brown University, where he is now Professor of Engineering and Physics. He is a recipient of a Sloan Fellowship, an Office of Naval Research Young Investigator award, and a National Science Foundation Career award. During 2009–12 he was a Senior Chair of Excellence at the Nanosciences Foundation of Grenoble. He has served as one of four editors of the Solid State Electronics international journal since 2003. He has authored over 170 journal articles and book chapters, and co-edited nine books. Research interests include tunneling- and hot electron-based semiconductor devices, ultrathin SOI structures, nanowire and quantum dot-based devices, amorphous oxide-based devices, error-immune probabilistic computing, and CMOS integration of sensors and detectors.
For more information, contact: Brandy Ciraldo at brandy.ciraldo@uconn.edu